Band-Gap Engineering via Tailored Line Defects in Boron-Nitride Nanoribbons, Sheets, and Nanotubes

English Version

　您现在的位置：首页>>科学研究>>研究进展

Band-Gap Engineering via Tailored Line Defects in Boron-Nitride Nanoribbons, Sheets, and Nanotubes

( 2012-06-17 )

　　　　 Band-Gap Engineering via Tailored Line Defects in

　　　　Boron-Nitride Nanoribbons, Sheets, and Nanotubes

　　　　　Xiuling Li, Xiaojun Wu, Xiao Cheng Zeng, and Jinlong Yang

　　　　 ACS Nano

　　　　 Published online April 08, 2012

学术活动

[24-11-15]

Prof. Junwei Liu: Novel properties due to crystal symmetry in topological superconductors and spin-splitting antiferromagnets (2024/11/28)

[24-11-15]

Dr. Rubén Esteban: Quantum Effects in Nanophotonics (2024/11/25)

[24-11-14]

Prof. Shuyun Zhou: 半导体黑磷的超快瞬时能带调控 (2024/11/20)

[24-11-12]

Prof. Huijun Liu: Artificial intelligence for high-throughput discovery of high-performance thermoelectric materials (2024/11/14)

[24-10-29]

Prof. Jeil Jung: Layer pseudospin magnetism and electric field induced anomalous Hall effects in rhombohedral multilayer graphene (2024/10/30)

[24-10-09]

Prof. Qianqian Lin: Optoelectronic Characterization and Device Considerations of Next-generation Solution-processed Semiconductors (2024/10/16)

[24-09-24]

Prof. Mu Wang: Manipulation of Light with Optical Metasurfaces: from Classical to Quantum (2024/09/30)

[24-09-17]

Prof. Bin Ren: Tip-enhanced Raman spectroscopy for nanoscale resolving the electronic properties and chemical activitie (2024/09/19)

友情链接

中科院物理所

中国科学技术大学


	欲浏览最佳效果建议你使用IE4.0版本以上的浏览器屏幕设置为1024*768 增强色16位　浏览总人数: 版权所有：中国科学技术大学国际功能材料量子设计中心