English Version
 
 您现在的位置:首页>>首页学术报告

Dr. Dimitrie Culcer: Hole spin qubits in Si: coherence and control (2019/05/09)

( 2019-05-06 )

题目

Hole spin qubits in Si: coherence and control

报告人

Dr. Dimitrie Culcer

School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, The University of New South Wales, Australia

时间

2019年5月9日(星期四)下午4:00

地点

微尺度国家研究中心9004会议室

报告人简介

Dimitrie Culcer obtained his PhD from the University of Texas at Austin in 2005. He worked as a postdoctoral research fellow first at Argonne National Laboratory between 2006-2008, and subsequently at the University of Maryland, College Park, 2008-2010. He became a faculty member at the University of Science and Technology of China in 2010, where he was a member of the International Center for Quantum Design of Functional Materials. In 2013 he moved to the University of New South Wales in Sydney where he is currently a Senior Lecturer. His research interests include quantum information and computation, spin-orbit coupling and topological effects in condensed matter physics, quantum transport theory and electron-electron interaction effects, in particular the interplay of interactions with strong spin-orbit coupling. He is actively working in all these areas.

报告摘要

Electrical control of quantum bits could pave the way for scalable quantum computation. An acceptor spin qubit in Si, based on spin-3/2 holes, can be controlled by electrical means using a gate electrode, which offers fast one- and two-qubit rotations and long coherence times at certain sweet spots. The relaxation time T1, while allowing 105 operations, is the primary limiting factor [1]. I will show that, due to the interplay of the Td symmetry of the acceptor in the Si lattice and the spin-3/2 characteristic of hole systems, an applied in-plane magnetic field strongly enhances the performance and coherence properties of the qubit. An appropriate choice of magnetic field orientation leads to a near-total suppression of spin relaxation as well as full tunability of two-qubit operations in a parameter regime in which dephasing due to charge fluctuations can be eliminated. Interestingly for spintronic applications, we find an extreme in-plane anisotropy such that the in-plane g-factor can vanish under certain circumstances [2].

References

[1]J. Salfi, J. A. Mol, D. Culcer, and S. Rogge, Physica Review Letters 116, 246801 (2016).

[2]J. C. Abadillo-Uriel, J. Salfi, X. Hu, S. Rogge, M. J. Calderon, and D. Culcer, arXiv:1706.08858

 

 

 



学术活动
 
[24-03-29]
[24-03-13]
[24-03-13]
[24-01-15]
[23-12-21]
[23-12-12]
[23-12-08]
[23-12-05]
友情链接
 
欲浏览最佳效果 建议你使用IE4.0版本以上的浏览器 屏幕设置为1024*768 增强色16位  浏览总人数:
版权所有:中国科学技术大学国际功能材料量子设计中心